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1N4448HLP
Document number: DS30590 Rev. 12 - 2
2 of 5
www.diodes.com
March 2012
? Diodes Incorporated
1N4448HLP
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
VRM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80 V
RMS Reverse Voltage
VR(RMS)
57 V
Forward Continuous Current
IFM
300 mA
Average Rectified Output Current
IO
95 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
2.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
PD
250 mW
Thermal Resistance Junction to Ambient (Note 5)
RθJA
500
°C/W
Operating and Storage Temperature Range
TJ , TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Conditions
Reverse Breakdown Voltage (Note 6)
V(BR)R
80
?
V
IR
= 100
μA
Forward Voltage
VF
0.62
?
?
?
0.72
0.855
1.0
1.25
V
IF
= 5.0mA
IF
= 10mA
IF
= 100mA
IF
= 150mA
Peak Reverse Current (Note 6)
IR
?
100
50
30
25
nA
μA
μA
nA
VR
= 80V
VR
= 75V, T
J
= 150
°C
VR
= 25V, T
J
= 150
°C
VR
= 20V
Total Capacitance
CT
?
3.0 pF VR
= 0.5V, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0 ns IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
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